1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation

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Abstract
High‐temperature operation of InAsP‐based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction‐band‐offset material (ΔEc) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction‐band offset of InAs0.52P0.48P/InGaAsP is the half of the band‐gap energy difference (0.5 ΔEg), which is larger than that of conventional quaternary material systems. A strain‐compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad‐area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high‐reflectivity coating on both facets, continuous‐wave lasing operation at temperatures up to 150 °C was achieved with a characteristic temperature of 59 K (30<T<70 °C) demonstrating the suitability of InAsP for high‐temperature operation.