Bond Lengths in III–V Ternary Alloy Semiconductors
- 1 December 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (12R) , 2061
- https://doi.org/10.1143/jjap.26.2061
Abstract
An analysis was applied to 18 different III-V ternary alloy semiconductors. A thermodynamical approach was taken in order to derive relative numbers or statistics of tetrahedron cells, and then the average bond lengths were theoretically calculated. To this extent, they would give us a basic idea of the microstructure of alloy semiconductors. The theoretical results of In1-x Ga x As and GaAs1-x P x agree fairly well with experimental data from extended X-ray absorption fine structures.Keywords
This publication has 15 references indexed in Scilit:
- Average Bond Lengths and Atom Arrangement in In1-xGaxAs and GaAs1-xPx III-V Ternary Alloy SemiconductorsJapanese Journal of Applied Physics, 1987
- A pseudopotential approach to the disorder effects in III‐V ternary semiconductor alloysPhysica Status Solidi (b), 1986
- An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs1-xPxJapanese Journal of Applied Physics, 1986
- Semiconductor pseudobinary alloys: Bond-length relaxation and mixing enthalpiesPhysical Review B, 1985
- The Atomic‐Scale Origin of the Strain Enthalpy of Mixing in Zincblende AlloysJournal of the Electrochemical Society, 1985
- Bond-length relaxation in pseudobinary alloysPhysical Review B, 1985
- Bond lengths around isovalent impurities and in semiconductor solid solutionsPhysical Review B, 1984
- Local structure of ternary semiconducting random solid solutions: Extended x-ray-absorption fine structure ofPhysical Review B, 1984
- Calculation of Bond Length in Ga1-xInxAs Ternary SemiconductorsJapanese Journal of Applied Physics, 1984
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966