Location of Si-interstitials in radiation damaged Si-crystals with double alignment channeling technique
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 28 (1-2) , 97-101
- https://doi.org/10.1080/00337577608233033
Abstract
In a double alignment backscattering channeling experiment the angular dependence (for detector rotation) of helium ions-backscattered from a radiation damaged silicon crystal at room temperature-has been studied. The 1.5 MeV He+-beam was incident on the specimen parallel to , the backscattered ions were registered on plastic films in the blocking directions [110], [010] and [111] and in small angular ranges around these blocking directions. The position of silicon interstitials is discussed by comparing the backscattering yield profiles-obtained as a function of emission angle from the spatial distribution of ion tracks on the plastic films-with calculated yield profiles on the computer simulations.Keywords
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