Electron stimulated desorption induced by the scanning tunneling microscope

This publication has 25 references indexed in Scilit:

• Al Nucleation on Monohydride and Bare Si(001) Surfaces: Atomic Scale Patterning
  Physical Review Letters, 1997
• Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
  Japanese Journal of Applied Physics, 1996
• Vibrational dynamics of the Si–H stretching modes of the Si(100)/H:2×1 surface
  The Journal of Chemical Physics, 1995
• Theoretical study of the mechanism of recombinative hydrogen desorption from the monohydride phase of Si(100): The role of defect migration
  The Journal of Chemical Physics, 1994
• Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
  Applied Physics Letters, 1994
• Site-specific measurement of adatom binding energy differences by atom extraction with the STM
  Physical Review Letters, 1993
• Evidence of pairing and its role in the recombinative desorption of hydrogen from the Si(100)-2×1 surface
  Physical Review Letters, 1991
• Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption
  Physical Review Letters, 1990
• Electronic structures of the monohydride (2×1):H and the dihydride(1×1)∷2HSi(001) surfaces studied by angle-resolved electron-energy-loss spectroscopy
  Physical Review B, 1983
• Correlation of stimulatedH+-desorption threshold with localized state observed in Auger line shape—Si(100): H
  Physical Review B, 1982