Luminescence in III-nitrides

This publication has 53 references indexed in Scilit:

• DX-center formation in wurtzite and zinc-blendeAlxGa1−xN
  Physical Review B, 1998
• Interactions of hydrogen with native defects in GaN
  Physical Review B, 1997
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
  Japanese Journal of Applied Physics, 1997
• Pressure Induced Deep Gap State of Oxygen in GaN
  Physical Review Letters, 1997
• Optical detection of magnetic resonance in electron-irradiated GaN
  Physical Review B, 1997
• The excitonic bandgap of GaN: Dependence on substrate
  Solid-State Electronics, 1997
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
  Journal of Applied Physics, 1996
• On p-type doping in GaN—acceptor binding energies
  Applied Physics Letters, 1995
• Luminescence in epitaxial GaN : Cd
  Journal of Applied Physics, 1974