Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

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Abstract
Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN and their quantum well structures. Conductivity control of both n-type and p-type nitrides has also been achieved. These achievements have led to the commercialization of high-brightness blue, green and white light-emitting diodes and to the realization of short wavelength laser diodes and high-speed transistors based on nitrides. The performance of these devices is still progressing, but still requires advances in many areas of materials science and device fabrication.