Effect of heat treatment on the properties of gallium-implanted polycrystalline silicon
- 29 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 746-748
- https://doi.org/10.1063/1.99820
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealingApplied Physics Letters, 1987
- Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimonyApplied Physics Letters, 1987
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980