Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony
- 25 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (21) , 1524-1526
- https://doi.org/10.1063/1.97820
Abstract
Polycrystalline silicon films, ion implanted with antimony to a dose of 1–3×1015/cm2 at an energy of 100 keV, were heat treated by means of rapid thermal or conventional furnace techniques. It was found that the electrical resistivity is a function of time, reaching a minimum value that is relatively lower at 600 than 900 °C for heat treatment times that are short enough to avoid significant lattice diffusion, and then increasing with time. However, in cases where longer times at high temperatures (between 860 and 975 °C) are used in order to provide sufficient atom movement, the resistivity increases with decrease in temperature. The results are explained on the basis of recrystallization, diffusion, and segregation processes.Keywords
This publication has 11 references indexed in Scilit:
- Experimental study of the minority-carrier transport at the polysilicon—monosilicon interfaceIEEE Transactions on Electron Devices, 1985
- Diffusion of arsenic in bilayer polycrystalline silicon filmsJournal of Applied Physics, 1984
- Metastable doping behavior in antimony-implanted (100) siliconJournal of Applied Physics, 1982
- Electrical characteristics of heavily arsenic and phosphorus doped polycrystalline siliconJournal of Applied Physics, 1982
- The annealing behavior of antimony implanted polycrystalline siliconApplied Physics Letters, 1982
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Barrier heights at the polycrystalline silicon-SiO2 interfaceJournal of Applied Physics, 1981
- CalendarIEEE Spectrum, 1981
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975