Full band Monte Carlo investigation of electron transport in strained Si grown on Si1−xGex substrates

In-plane drift velocities determined by full band Monte Carlo simulations and drift mobility calculations are reported for electrons in strained Si grown on Si${}_{\text{1−x}}$ Ge ${}_x$ substrates up to $\text{x=0.4}$ at 77 and 300 K. Drift mobilities of 28200 cm${}^2$ /(V s) at 77 K and 2230 cm${}^2$ /(V s) at 300 K are found for $\text{x=0.3}$ . Strain enhances the drift velocity significantly only below electric fields of about 50 kV/cm. At 77 K the Gunn effect is predicted to occur above 15 kV/cm.