Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (8) , 1224-1232
- https://doi.org/10.1109/16.506773
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Analytical model of field-effect transistorsSolid-State Electronics, 1995
- In-plane transport properties of Si/Si/sub 1-x/Ge/sub x/ structure and its FET performance by computer simulationIEEE Transactions on Electron Devices, 1994
- High hole mobility in SiGe alloys for device applicationsApplied Physics Letters, 1994
- Electronic-band parameters in strained alloys on substratesPhysical Review B, 1993
- Silicon MOS transconductance scaling into the overshoot regimeIEEE Electron Device Letters, 1993
- High-performance 0.10- mu m CMOS devices operating at room temperatureIEEE Electron Device Letters, 1993
- Heterojunction FETs in III–V compoundsIBM Journal of Research and Development, 1990
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layersIEEE Electron Device Letters, 1988
- Electron states in narrow gate-induced channels in SiApplied Physics Letters, 1986