Analytical model of field-effect transistors
- 1 November 1995
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (11) , 1969-1971
- https://doi.org/10.1016/0038-1101(95)00116-b
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Analysis of self-aligned MOSFETs with modulation-doped SiGe channelsSolid-State Electronics, 1993
- High-mobility GeSi PMOS on SIMOXIEEE Electron Device Letters, 1993
- High-performance Si/SiGe n-type modulation-doped transistorsIEEE Electron Device Letters, 1993
- An analytic model for HEMT's using new velocity-field dependenceIEEE Transactions on Electron Devices, 1987
- An analytic model for high-electron-mobility transistorsSolid-State Electronics, 1987
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982