An analytic model for high-electron-mobility transistors

This publication has 14 references indexed in Scilit:

• Electron density of the two-dimensional electron gas in modulation doped layers
  Journal of Applied Physics, 1983
• Model for modulation doped field effect transistor
  IEEE Electron Device Letters, 1982
• Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)
  Applied Physics Letters, 1982
• Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
  IEEE Transactions on Electron Devices, 1982
• Electron velocity in Si and GaAs at very high electric fields
  Applied Physics Letters, 1980
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions
  Japanese Journal of Applied Physics, 1980
• Electron mobilities in modulation-doped semiconductor heterojunction superlattices
  Applied Physics Letters, 1978
• A review of some charge transport properties of silicon
  Solid-State Electronics, 1977
• Computer simulation of instability and noise in high-power avalanche devices
  IEEE Transactions on Electron Devices, 1973
• MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
  Applied Physics Letters, 1967