Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)
- 1 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 277-279
- https://doi.org/10.1063/1.93500
Abstract
Electron velocity and mobility versus electric field measurements were made in AlxGa1−xAs/GaAs modulation‐doped structures in an electric field range of 0–2 kV/cm and in a temperature range of 77–300 K. The electron velocities obtained at 2 kV/cm were 1.7×107 cm/ s at 300 K and 2.24×107 cm/s at 77 K. The velocity‐field and mobility‐field characteristics obtained were in very good agreement with Monte Carlo results for undoped GaAs, suggesting that existing Monte Carlo calculations are capable of predicting transport in AlxGa1−xAs/GaAs modulation‐doped structures. An ideal modulation‐doped structure can thus be assumed to exhibit transport properties identical to that of undoped GaAs. The advantage of modulation doping is the ability to place 7×1011 cm−2 electrons at the heterointerface for current conduction for devices, while avoiding all the adverse effects of impurity scattering.Keywords
This publication has 13 references indexed in Scilit:
- Influence of AlxGa1−xAs buffer layers on the performance of modulation-doped field-effect transistorsApplied Physics Letters, 1982
- Low noise normally on and normally off two-dimensional electron gas field-effect transistorsApplied Physics Letters, 1982
- Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructuresJournal of Crystal Growth, 1982
- Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- Growth conditions to achieve mobility enhancement in Al x Ga 1−x As-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- Transport Properties of GaAsPhysical Review B, 1968