High-mobility GeSi PMOS on SIMOX
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (11) , 520-522
- https://doi.org/10.1109/55.258002
Abstract
A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge/sub 0.3/Si/sub 0.7//Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.Keywords
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