High-performance Si/SiGe n-type modulation-doped transistors
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (7) , 348-350
- https://doi.org/10.1109/55.225569
Abstract
Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.Keywords
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