UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

This publication has 71 references indexed in Scilit:

• Low temperature operation of Si and SiGe bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
  IEEE Electron Device Letters, 1992
• 55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1991
• 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
  IEEE Electron Device Letters, 1990
• Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
  IEEE Electron Device Letters, 1989
• Surfactants in epitaxial growth
  Physical Review Letters, 1989
• GexSi1−x strained-layer heterostructure bipolar transistors
  Applied Physics Letters, 1988
• Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
  Applied Physics Letters, 1988
• Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD
  MRS Proceedings, 1986
• Theory of a Wide-Gap Emitter for Transistors
  Proceedings of the IRE, 1957