Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal AnnealingJapanese Journal of Applied Physics, 1985
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984