Low temperature operation of Si and SiGe bipolar transistors
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 17-20
- https://doi.org/10.1109/iedm.1990.237236
Abstract
The operation of Si and SiGe epitaxial-base bipolar transistors at liquid nitrogen temperature is demonstrated to be comparable or superior to that at room temperature. Tunneling leakage at the emitter-base junction is suppressed at all temperatures as a result of a lightly doped spacer. The maximum current gain of both the Si and the SiGe devices shows a very small temperature dependence. Monte Carlo simulations of a Si-base transistor at 77 K indicate the presence of velocity overshoot, which is supported by the higher current density at the onset of base pushout. The peak cutoff frequency at 85 K is 57 GHz for the Si transistor and 94 GHz for the SiGe transistor, respectively 8% and 25% higher than at 298 K.Keywords
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