Comment on ‘‘Extended photoemission fine structure analysis of the Si(111)-(7×7) surface core levels’’
- 6 June 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (23) , 3740
- https://doi.org/10.1103/physrevlett.72.3740
Abstract
A Comment on the Letter by J. A. Carlisle et al. Phys. Rev. Lett. 71, 2955 (1993).Keywords
This publication has 5 references indexed in Scilit:
- Extended photoemission fine structure analysis of the Si(111)-(7×7) surface core levelsPhysical Review Letters, 1993
- Electronic structure and its dependence on local order for H/Si(111)-(1×1) surfacesPhysical Review Letters, 1993
- Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitutionPhysical Review B, 1992
- Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge systemPhysical Review B, 1989
- Photoemission studies of the initial adsorption and growth of Ag and Au on Ge and SiPhysical Review B, 1987