The Effects of Space Radiation on Mosfet Devices and Some Application Implications of Those Effects
- 1 December 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (6) , 262-272
- https://doi.org/10.1109/tns.1996.4324370
Abstract
MOSFET devices and microcircuits have been designed and built into flight hardware for use in open operational spacecraft (IMP D&E) by NASA/GSFC. A look at some of the engineering results associated with studying this class of devices for use in these applications is reviewed here. In addition, there is a first-cut engineering study for comparison of performance, in a simulated space radiation environment, of two types of MOSFET's and the newer experimental silicon nitrite devices (MNS-FET). The experiments reported upon are application parameter oriented and of limited sample size. Therefore, no attempt is made to draw any far-reaching conclusions about MOSFET's in general, nor are any devices physics oriented interpretations included.Keywords
This publication has 1 reference indexed in Scilit:
- ELECTRON BOMBARDMENT OF MOS CAPACITORSApplied Physics Letters, 1966