ELECTRON BOMBARDMENT OF MOS CAPACITORS
- 15 March 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (6) , 140-142
- https://doi.org/10.1063/1.1754525
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON Si-INSULATED GATE FETsApplied Physics Letters, 1965
- Effects of electron irradiation on metal-oxide semiconductor transistorsProceedings of the IEEE, 1965
- THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURESApplied Physics Letters, 1965
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963