EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON Si-INSULATED GATE FETs
- 15 September 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (6) , 145-146
- https://doi.org/10.1063/1.1754348
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURESApplied Physics Letters, 1965
- REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATIONApplied Physics Letters, 1965
- Carrier Surface Scattering in Silicon Inversion LayersIBM Journal of Research and Development, 1964
- Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating LayersIBM Journal of Research and Development, 1964
- EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p-TYPE SILICONApplied Physics Letters, 1964