Effect of ion implantation induced defects on optical attenuation in silicon waveguides
- 13 November 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (23) , 1648-1649
- https://doi.org/10.1049/el:20031036
Abstract
The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm−1 for a dose of 1×1014 cm−2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies.Keywords
This publication has 7 references indexed in Scilit:
- Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 μmJournal of Lightwave Technology, 2002
- Simple expression for vacancy concentrations at half ion range following MeV ion implantation of siliconApplied Physics Letters, 2002
- An efficient room-temperature silicon-based light-emitting diodeNature, 2001
- Silicon-on-insulator asymmetric optical switch based on total internal reflectionIEEE Photonics Technology Letters, 1997
- Silicon-based optoelectronicsProceedings of the IEEE, 1993
- Large single-mode rib waveguides in GeSi-Si and Si-on-SiO/sub 2/IEEE Journal of Quantum Electronics, 1991
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969