Electron paramagnetic resonance of extended defects in semi-insulating GaAs
- 1 June 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4541-4543
- https://doi.org/10.1063/1.331200
Abstract
The temperature dependence, over the 4.2–100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi‐insulating GaAs:Cr sample. From its Curie‐Weiss behavior, leading to a (T+13.1)−1 law, it is concluded that it may result from antiferromagnetic exchange coupled spins, originating from dangling bonds located on extended defects present in the crystal.This publication has 11 references indexed in Scilit:
- Optical and ESR spectroscopy of deep defects in III-V semiconductorsPublished by Springer Nature ,2007
- Collective investigations on two typical semi-insulating GaAs ingotsMaterials Research Bulletin, 1981
- Photo‐EPR of deformation‐produced defects in GaAsCrystal Research and Technology, 1981
- ESR in semi-insulating GaAs:Cr and colorimetric determination of the Cr contentPhysica Status Solidi (a), 1977
- ESR in heavily doped n-type silicon near a metal-nonmetal transitionPhysica Status Solidi (a), 1976
- Electron Spin Resonance of Shallow Level Carriers in CuClPhysica Status Solidi (b), 1975
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- ESR Study on Surface Properties of Semiconductor. II. III–V Compounds (GaAs, GaSb and InSb)Japanese Journal of Applied Physics, 1970
- Electron spin resonance in n-type GaAsPhysics Letters, 1963
- Thermal and magnetic properties of CuSO4.5H2O and CuSeO4.5H2O below 1°KPhysica, 1962