Electron energy-loss spectra of Si(111) reacted with nitrogen atoms
- 2 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 167 (2-3) , 285-296
- https://doi.org/10.1016/0039-6028(86)90705-3
Abstract
No abstract availableKeywords
Funding Information
- Kurata Memorial Hitachi Science and Technology Foundation
- Ministry of Education
This publication has 18 references indexed in Scilit:
- Inelastic scattering of slow electrons from Si(111) surfacesPhysical Review B, 1984
- Temperature-Dependent Surface States and Transitions of Si(111)-7×7Physical Review Letters, 1983
- Nitrogen-bonding environments in glow-discharge—depositedfilmsPhysical Review B, 1983
- Thermal nitridation of Si(111) by nitric oxideJournal of Vacuum Science and Technology, 1981
- Nitridation of silicon (111): Auger and LEED resultsJournal of Vacuum Science and Technology, 1980
- Molecular structure, microstructure, macrostructure and properties of silicon nitrideInorganica Chimica Acta, 1976
- Trisilylamine: Nitrogen isotope effect in the Raman spectrum and planarity of the NSi3 skeletonJournal of Raman Spectroscopy, 1974
- Theory of Inelastic Scattering of Slow Electrons by Long-Wavelength Surface Optical PhononsPhysical Review B, 1972
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971
- Spektroskopische Untersuchungen an Siliciumverbindungen. VI. Schwingungsspektren und Struktur des Hexamethylcyclotrisiloxans und HexamethylcyclotrisilazansZeitschrift für anorganische und allgemeine Chemie, 1959