Mode control in broad-area diode lasers by thermally induced lateral index tailoring
- 25 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (4) , 260-262
- https://doi.org/10.1063/1.99487
Abstract
Broad-area diode lasers that emit in the fundamental mode under short-pulse excitation are observed to evolve into higher order lateral modes with increasing pulse width. Our data provide convincing evidence that the lateral refractive index profile arising from junction heating plays a dominant role in determining the lateral emission modes in these devices for long-pulse and cw operation. Furthermore, we show that an external focused laser heat source can be used to modify the lateral index profile in a broad-area laser and thus control the lasing mode. In particular, we demonstrate that ≲50 mW of absorbed heating power is sufficient to counteract the effects of internal junction heating and restore fundamental mode operation at cw injection currents as high as 1.5 Ithreshold. Our results suggest that fundamental mode operation of broad-area devices at high-power levels might be realized by incorporating a tailored lateral index profile to compensate for internal junction heating.Keywords
This publication has 19 references indexed in Scilit:
- Confocal unstable-resonator semiconductor laserOptics Letters, 1986
- Modal properties of unstable resonator semiconductor lasers with a lateral waveguideApplied Physics Letters, 1985
- Tilted-mirror semiconductor lasersApplied Physics Letters, 1985
- Unstable resonator cavity semiconductor lasersApplied Physics Letters, 1985
- Etched-mirror unstable-resonator semiconductor lasersElectronics Letters, 1985
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- Mode guidance parallel to the junction plane of double-heterostructure GaAs lasersJournal of Applied Physics, 1973
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERSApplied Physics Letters, 1967