Anger Electron Emission under Ion-Beam Shadowing Conditions
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R) , 1440-1444
- https://doi.org/10.1143/jjap.24.1440
Abstract
By analyzing the electrons emitted at 180° with respect to the ion-beam direction, we have carried out an improved measurement of the energy-degradation spectra of Si K-shell Auger electrons induced by 18- and 24-MeV He++. The ions were incident on a silicon single crystal under shadowing and random conditions. From the analysis of the degradation-spectrum width for the shadowing conditions, the stopping power for 1.6-keV electrons in a silicon crystal was determined as 1.50±0.08 eV/Å, close to the theoretical value of 1.6 eV/Å obtained by Tung et al. The present results are almost consistent with a previous work by Kudo et al. carried out under different experimental conditions.Keywords
This publication has 9 references indexed in Scilit:
- Energy Spectra of ion-induced Auger electrons under channeling conditionsPhysical Review B, 1984
- Channeling effect measurements in Si by using resonant nuclear backscattering of 18–19-MeV α particlesJournal of Applied Physics, 1981
- An analytical expression for the calculation of electron mean free paths in solidsJournal of Electron Spectroscopy and Related Phenomena, 1981
- Electron inelastic mean free paths and energy losses in solids II: Electron gas statistical modelSurface Science, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Electron Stopping Power in Aluminum in the Energy Region from 2 to 10.9 keVJournal of the Physics Society Japan, 1978
- The energy loss of transmitted and backscattered electronsJournal of Physics D: Applied Physics, 1975
- Predictions of inner-shell Coulomb ionization by heavy charged particlesAtomic Data and Nuclear Data Tables, 1975
- Low-Energy Electron Beam Studies in Thin Aluminum FoilsJournal of Applied Physics, 1971