Anger Electron Emission under Ion-Beam Shadowing Conditions

Abstract
By analyzing the electrons emitted at 180° with respect to the ion-beam direction, we have carried out an improved measurement of the energy-degradation spectra of Si K-shell Auger electrons induced by 18- and 24-MeV He++. The ions were incident on a silicon single crystal under shadowing and random conditions. From the analysis of the degradation-spectrum width for the shadowing conditions, the stopping power for 1.6-keV electrons in a silicon crystal was determined as 1.50±0.08 eV/Å, close to the theoretical value of 1.6 eV/Å obtained by Tung et al. The present results are almost consistent with a previous work by Kudo et al. carried out under different experimental conditions.