High-efficiency waveguide-coupled lambda =1.3 mu m In/sub x/Ga/sub 1-x/As/GaAs MSM detector exhibiting large extinction ratios at L and X band

Abstract
The design and fabrication of a 1.3- mu m waveguide-coupled strained-layer In/sub x/Ga/sub 1-x/As/GaAs MSM detector with an optimized active layer thickness is reported. For 100- mu m-long devices, a responsivity of 0.58 mA/mW is observed. Using the detector as an optoelectronic switch, on/off ratios better than 40 dB were achieved at L and X band.