1.3 μm monolithically integrated waveguide-interdigitated metal-semiconductor-metal photodetector on a GaAs substrate
- 7 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (19) , 1892-1894
- https://doi.org/10.1063/1.103079
Abstract
An InGaAs/GaAs strained-layer single quantum well waveguide-photodetector combination operating at a wavelength of 1.3 μm was fabricated on a GaAs substrate. An interdigitated metal-semiconductor-metal detector was deposited on top of the waveguide using Ti/Pt/Au for Schottky contacts. As expected, the responsivity of the detector increased with increasing single quantum well absorption in the waveguide and was sensitive to the polarization of the incident light. For TM polarization the responsivity of the detector was an order of magnitude lower at 1284 nm, compared to TE polarization, and exhibited weak dependence on wavelength, consistent with the transmission data. These results demonstrate for the first time a monolithically integrated 1.3 μm waveguide photodetector fabricated on a GaAs substrate.Keywords
This publication has 6 references indexed in Scilit:
- I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substratesApplied Physics Letters, 1989
- InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperatureApplied Physics Letters, 1989
- High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substratesIEEE Electron Device Letters, 1988
- Monolithic integration of a GaInAs p-i-n photodiode and an optical waveguide: modeling and realization using chloride vapor phase epitaxyJournal of Lightwave Technology, 1988
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974