A 9.5‐in. 1.3‐Mpixel low‐temperature poly‐Si TFT‐LCD fabricated by solid‐phase crystallization of very thin films and an ECR‐CVD gate insulator
- 18 June 1993
- journal article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 1 (2) , 203-209
- https://doi.org/10.1889/1.1984861
Abstract
Abstract—A unique combination of solid‐phase crystallization (SPC) and gate‐insulator technology has been used to fabricate low‐temperature poly‐Si TFTs. Using this technology, a high‐resolution 9.5‐in. TFT‐LCD with 1.3 Mpixel has been realized. This is believed to be the largest and highest‐resolution LCD employing low‐temperature poly‐Si TFTs fabricated to date.Keywords
This publication has 10 references indexed in Scilit:
- Future trends for TFT integrated circuits on glass substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Characterisation of low temperature poly-Si thin film transistorsSolid-State Electronics, 1991
- CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees CIEEE Transactions on Electron Devices, 1991
- Recrystallization of amorphous silicon films deposited by low-pressure chemical vapor deposition from Si2H6 gasJournal of Applied Physics, 1991
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealingApplied Physics Letters, 1989
- High performance low-temperature poly-Si n-channel TFTs for LCDIEEE Transactions on Electron Devices, 1989
- Low-temperature polycrystalline silicon thin-film transistors for displaysIEEE Transactions on Electron Devices, 1988
- Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1988
- Thin-film transistors fabricated in solid-phase-recrystallized Si films on fused silica substratesJournal of Applied Physics, 1983