Thin-film transistors fabricated in solid-phase-recrystallized Si films on fused silica substrates
- 1 February 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (2) , 1151-1153
- https://doi.org/10.1063/1.332088
Abstract
Solid-phase recrystallization of Si films prepared by chemical vapor deposition on fused silica substrates has been accomplished by transient heating on a graphite strip heater. This process increases the grain size from ∼50 nm to ∼1 μm. Thin-film transistors fabricated in the recrystallized films exhibit surface electron mobilities of 15–20 cm2/V s and on:off current ratios in excess of 105 for a voltage swing of 10 V.This publication has 12 references indexed in Scilit:
- Transient annealing of arsenic-implanted silicon using a graphite strip heaterApplied Physics Letters, 1981
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- High-performance amorphous-silicon field-effect transistorsJournal of Applied Physics, 1980
- Polycrystalline-silicon thin-film transistors on glassApplied Physics Letters, 1980
- MOSFETs in laser-recrystallized poly-silicon on quartzIEEE Electron Device Letters, 1980
- Recrystallization of Polycrystalline CVD Grown SiliconJournal of the Electrochemical Society, 1980
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972