High-performance amorphous-silicon field-effect transistors
- 1 December 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6443-6444
- https://doi.org/10.1063/1.327599
Abstract
p‐channel and n‐channel amorphous‐silicon field‐effect transistors with thermally grown SiO2 as a gate insulator have been investigated. On‐off current ratios of 4×106 and 105 were obtained for n‐ and p‐channel modes, respectively, and the electron and hole mobilities were about 0.1 and 2×10−3 cm2/V/s, respectively.This publication has 1 reference indexed in Scilit:
- Amorphous-silicon thin-film metal-oxide-semiconductor transistorsApplied Physics Letters, 1980