Direct Observation of Magnon Excitation in a Ferromagnetic Tunnel Junction Using Inelastic-Electron-Tunneling Spectroscopy
- 1 October 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (10A) , L1106
- https://doi.org/10.1143/jjap.38.l1106
Abstract
Inelastic-electron-tunneling spectroscopy (IETS) is applied to investigate the spin-dependent tunneling process for a Ta/Ni80Fe20/FeMn/Ni80Fe20/Al-oxide/Co/Ni80Fe20 ferromagnetic tunnel junction. IET spectra for both parallel and antiparallel magnetization configurations of ferromagnetic electrodes exhibit a strong peak at 20 mV. Using the subtraction between these spectra, we obtain the inelastic excitation spectrum induced only by the magnetic origin. This spectrum exhibits a strong peak at 18 mV and decreases monotonically with increasing bias voltage. The bias-voltage dependence of tunnel magnetoresistance (TMR) is the same. These results are discussed by considering the distribution of the surface magnon excitation energy.Keywords
This publication has 14 references indexed in Scilit:
- Local Transport Property on Ferromagnetic Tunnel Junction Measured Using Conducting Atomic Force MicroscopeJapanese Journal of Applied Physics, 1999
- Voltage and Temperature Dependence of the TMR Effect for Ferromagnet/Al-Oxide/Co Junctions.Journal of the Magnetics Society of Japan, 1999
- Analysis of the Interlayer in Al/Al2O3/Co/Al Junctions by Inelastic-Electron Tunneling-SpectroscopyJournal of the Magnetics Society of Japan, 1999
- Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel JunctionsPhysical Review Letters, 1998
- Magnetic and transport properties of Mn oxides filmsJournal of Physics D: Applied Physics, 1998
- Temperature and Applied Voltage Dependence of Magnetoresistance Ratio in Fe/Al oxide/Fe JunctionsJapanese Journal of Applied Physics, 1998
- Bias Voltage Dependence of GMR in Insulating Granular Thin FilmsJournal of the Magnetics Society of Japan, 1998
- Analysis of the Interlayers in a Ferromagnet/Insulator Junction by Inelastic Electron-Tunneling SpectroscopyJournal of the Magnetics Society of Japan, 1998
- Temperature Dependence of the Spin Tunneling Magnetoresistive Effect on NiFe/Co/Al2O3/Co/NiFe/FeMn JunctionsJapanese Journal of Applied Physics, 1997
- Spin-polarized tunneling and magnetoresistance in ferromagnet/insulator(semiconductor) single and double tunnel junctions subjected to an electric fieldPhysical Review B, 1997