Investigation of walk-out phenomena in SiC mesa diodes with SiO 2 Si3N4
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1476-1479
- https://doi.org/10.1016/s0925-9635(97)00075-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969