Response of potential probes to nonequilibrium situations
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 387-395
- https://doi.org/10.1063/1.333977
Abstract
When a metal contact is placed on a semiconducting material which is not in electronic equilibrium, a floating potential (difference) is developed between the metal and the bulk semiconductor. This is analogous to the open circuit voltage of a solar cell. Floating potentials can cause substantial errors when associated with probes used for the determination of potential contours. Their magnitude is here calculated by numerical and analytic techniques, as a function of the departure from equilibrium and the characteristics of the contact barrier structure. Criteria are established for a safe use of potential probes.This publication has 3 references indexed in Scilit:
- A new static method for measuring minority carrier lifetimeJournal of Applied Physics, 1983
- Properties of metal semiconductor contacts—I voltage-current characteristics of contacts on intrinsic semiconductorsSolid-State Electronics, 1983
- Minority-carrier injection and extraction in-type germaniumPhysical Review B, 1980