Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors

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Abstract
Using the model of an infinite well we have performed detailed calculations of the hole band structure in a strained quantum well. In‐plane effective masses and energy separations were calculated for different thicknesses of the well and In mole fractions below 0.50. Based on the calculations we estimated the optimal thickness of the well and In mole fraction for which the energy separation between the lowest two subbands has a maximum and the InGaAs layer is stable with respect to misfit dislocations. The results provide useful guidelines for the optimization of p‐channel field‐effect transistors.