Submilliampere operation of selectively oxidisedGaAs-QW vertical cavity lasers emitting at 840 nm
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 348-349
- https://doi.org/10.1049/el:19960283
Abstract
840nm GaAs quantum well vertical cavity surface emitting lasers with an intracavity p-contact are fabricated using selective oxidation to achieve lateral confinement. Threshold currents of 520 µA and optical output powers of 1.5 mW are measured.Keywords
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