Energy Level of the 0 to + Charge Transition of Substitutional Manganese in Silicon

An energy level of $E_v+0.38\mathrm{}$ eV related to the 0 to + charge transition of substitutional manganese in silicon has been determined with a combination of deep-level-transient spectroscopy and ESR measurements. There is no evidence for ordinary amphoteric or negative-$U$ behavior in the lower half of the band gap. This is the first identified energy level of a $3d$ substitutional impurity in silicon.