Luminescence Decay of the 1.54 μm Emission from Erbium in Silicon

This publication has 10 references indexed in Scilit:

• Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses
  Applied Physics Letters, 1995
• On the local structure of optically active Er centers in Si
  Applied Physics Letters, 1995
• Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
  Physical Review B, 1994
• Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode
  Applied Physics Letters, 1994
• Room-temperature electroluminescence from Er-doped crystalline Si
  Applied Physics Letters, 1994
• On excitation and decay mechanisms of the Yb³⁺luminescence in InP
  Semiconductor Science and Technology, 1990
• Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers
  Applied Physics Letters, 1988
• Gd³⁺and Tb³⁺luminescence quenching by the Auger effect in CdF₂crystals
  Journal of Physics C: Solid State Physics, 1984
• 1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon
  Applied Physics Letters, 1983
• Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors
  Physica Status Solidi (b), 1981