On excitation and decay mechanisms of the Yb3+luminescence in InP
- 1 November 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (11) , 1124-1131
- https://doi.org/10.1088/0268-1242/5/11/009
Abstract
The excitation and decay mechanisms of the Yb3+ intra-4f-shell emission are studied in n-type MOVPE-grown and p-type LPE grown InP:Yb layers by photoconductivity measurements, time-resolved photoluminescence, photoluminescence excitation and emission spectroscopy. Assuming a pseudo-donor or pseudo-acceptor-like character of the isoelectronic Yb3+ Td centre the temperature dependences of the 4f-shell transition intensity and lifetime can be consistently explained. Models for the excitation and decay processes of the Yb3+ photoluminescence are proposed.Keywords
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