A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
- 1 June 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1113-1116
- https://doi.org/10.1109/mwsym.2009.5165896
Abstract
We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.Keywords
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