Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates
- 1 June 2004
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (6) , 1055-1063
- https://doi.org/10.1016/j.sse.2003.12.029
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Relaxed Silicon-Germanium on Insulator (SGOI)MRS Proceedings, 2001
- Fundamental issues in wafer bondingJournal of Vacuum Science & Technology A, 1999
- Single-crystal ferroelectric microwave capacitorfabricated by separation by hydrogen implantationElectronics Letters, 1999
- Low temperature InP layer transferElectronics Letters, 1999
- Silicon Carbide on Insulator Formation by the Smart CUT® ProcessMaterials Science Forum, 1998
- A “smarter-cut” approach to low temperature silicon layer transferApplied Physics Letters, 1998
- Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substratesApplied Physics Letters, 1997
- Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloysJournal of Applied Physics, 1996
- Application of hydrogen ion beams to Silicon On Insulator material technologyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Silicon on insulator material technologyElectronics Letters, 1995