Low temperature InP layer transfer
- 18 February 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (4) , 341-342
- https://doi.org/10.1049/el:19990226
Abstract
High quality single crystalline 3 in Inp thin layers were transferred onto oxidised Si substrates at 150°C by wafer bonding and layer splitting from InP wafers which were co-implanted by B and H ions with the H implantation performed at 90°C.Keywords
This publication has 4 references indexed in Scilit:
- Transfer of 3 in GaAs film on silicon substrateby proton implantation processElectronics Letters, 1998
- A lower bound on implant density to induce wafer splitting in forming compliant substrate structuresApplied Physics Letters, 1997
- Gallium arsenide and other compound semiconductors on siliconJournal of Applied Physics, 1990
- Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substratesApplied Physics Letters, 1990