Transfer of 3 in GaAs film on silicon substrateby proton implantation process
- 19 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (4) , 408-409
- https://doi.org/10.1049/el:19980265
Abstract
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented.Keywords
This publication has 6 references indexed in Scilit:
- Basic mechanisms involved in the Smart-Cut® processMicroelectronic Engineering, 1997
- Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substratesApplied Physics Letters, 1997
- Silicon carbide on insulator formation using the Smart Cut process [Note 1]Electronics Letters, 1996
- Silicon on insulator material technologyElectronics Letters, 1995
- Low-threshold pulsed operation of long-wavelengthlasers on Sifabricated by direct bondingElectronics Letters, 1995
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988