A lower bound on implant density to induce wafer splitting in forming compliant substrate structures
- 30 June 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (26) , 3519-3521
- https://doi.org/10.1063/1.119219
Abstract
The physical system under study is a bonded semiconductor wafer into which hydrogen ions have been implanted within a planar zone, typical of a configuration used in forming semiconductor-on-insulator compliant substrates by wafer splitting. Under the assumption that splitting is a consequence of crack growth driven by hydrogen gas pressure, a lower bound estimate of the implant density required for large area crack growth is obtained which, for an ideal gas, depends only on the cohesive strength of the material and on temperature.Keywords
This publication has 10 references indexed in Scilit:
- Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substratesApplied Physics Letters, 1997
- A critical thickness condition for a strained compliant substrate/epitaxial film systemApplied Physics Letters, 1996
- Application of hydrogen ion beams to Silicon On Insulator material technologyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Silicon Carbide Wafer BondingJournal of the Electrochemical Society, 1995
- Change in crystalline morphologies of polycrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °CApplied Physics Letters, 1994
- New approach to grow pseudomorphic structures over the critical thicknessApplied Physics Letters, 1991
- Thermodynamics of the quasi-static growth of Griffith cracksJournal of the Mechanics and Physics of Solids, 1978
- Distribution of irradiation damage in silicon bombarded with hydrogenPhysical Review B, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Delayed Fracture of Metals under Static LoadNature, 1952