Observation by Cyclotron Resonance of the Effect of Strain on Germanium and Silicon
- 1 October 1958
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 72 (4) , 514-522
- https://doi.org/10.1088/0370-1328/72/4/305
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A frequency modulated microwave spectrometer for electron resonance measurementsJournal of Scientific Instruments, 1957
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Elastic Constants of Germanium between 1.7° and 80°KJournal of Applied Physics, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Elastoresistance in-Type Ge and SiPhysical Review B, 1954
- A new method for measuring the thermal expansion of solids at low temperatures; the thermal expansion of copper and aluminium and the Grüneisen rulePhysica, 1954
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953
- Measurements on the thermal expansion of Jena thermometer glass 2954III by the method of the vertical comparatorPhysica, 1934