Nitrogen doping during growth of dislocation-free FZ silicon crystals
- 19 February 1987
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (2) , K21-K22
- https://doi.org/10.1002/crat.2170220226
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystalsJournal of Applied Physics, 1983
- Deep Levels Associated with Nitrogen in SiliconJapanese Journal of Applied Physics, 1982
- The nature and formation mechanism of anomalous defects in dislocation free FZ-silicon crystals caused by hydrogen dopingPhysica Status Solidi (a), 1982
- Behaviour of light impurity elements in the production of semiconductor siliconJournal of Radioanalytical and Nuclear Chemistry, 1974
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973