Observation of optically excited near-zone-edge phonons in GaAs by diffuse x-ray scattering
- 15 October 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (8) , 4774-4776
- https://doi.org/10.1103/physrevb.26.4774
Abstract
We report on the use of diffuse x-ray scattering as a probe of nonequilibrium phonon excitations generated optically in GaAs at K. The measurements show a substantial athermal population of TA phonons near the [111] zone boundary consistent with a lifetime of microseconds.
Keywords
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