Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (5) , 194-196
- https://doi.org/10.1109/55.568759
Abstract
We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.Keywords
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