Monolithic NMOS digital integrated circuits in 6H-SiC
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (11) , 455-457
- https://doi.org/10.1109/55.334665
Abstract
We report the first digital monolithic integrated circuits in the wide bandgap semiconductor silicon carbide (SiC). These logic gates are implemented in enhancement-mode NMOS using ion implanted MOSFET's with non-self-aligned metal gates. We have fabricated and characterized inverters, NAND and NOR gates, XNOR gates, D-latches, RS flip-flops, binary counters, and half adders. All circuits operate properly from room temperature to over 300/spl deg/C.Keywords
This publication has 9 references indexed in Scilit:
- High voltage 6H-SiC rectifiers: prospects and progressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCIEEE Transactions on Electron Devices, 1994
- A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applicationsIEEE Electron Device Letters, 1994
- High temperature silicon carbide MOSFETs with verylow drain leakage currentElectronics Letters, 1994
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- MOS characterization of thermally oxided 6H silicon carbideIEEE Transactions on Electron Devices, 1993
- Nitrogen-implanted SiC diodes using high-temperature implantationIEEE Electron Device Letters, 1992
- Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsJournal of Applied Physics, 1988